semiconductor device

1. Package and Electrostatic Discharge Failure Analysis of Power Semiconductor Device Chip
   功率器件芯片封装和静电放电失效分析
2. Fuse for protection of semiconductor device
   保护半导体器件熔断器
3. Heat sink for power semiconductor device
   GB/T8446.1-1987电力半导体器件用散热器
4. Measuring methods for semiconductor device& Reverse blocking triode thyristor
   GB/T4024-1983半导体器件反向阻断三极晶闸管的测试方法
5. Semiconductor Device/ Circuit Mixed-Type Simulation and Its Application in HPM Effects
   半导体器件/电路混合模拟及其在HPM效应中的应用
6. Sound knowledge in semiconductor physics, semiconductor device testing and characterization.
   具备半导体物理学，半导体设备测试和性能的相关知识。
7. Spice and VHDL Co-Simulation for the Power Semiconductor Device
   基于SPICE和VHDL的有源半导体器件仿真
8. Design and Establishment of the General Physics Net Text with Teachers Leading Function; Sound knowledge in semiconductor physics, semiconductor device testing and characterization.
   主导型《基础物理》网络教材的设计开发具备半导体物理学，半导体设备测试和性能的相关知识。
9. Accordingly, such a semiconductor device can be fabricated easily in which a MOS type element and a bipolar element are formed on the same chip in a mixed manner.
   从而，能够容易制造出在同一个芯片上混装了MOS型元件和双极元件的半导体装置。
10. Complementary metal oxide semiconductor device
    互补金属氧化物半导体器件
11. The invention improves puncture voltage characteristic of the semiconductor device, in addition, collision ionization in the semiconductor device can be avoided.
    本发明改善了半导体器件的击穿电压特性，此外，在本发明的半导体器件中可以避免碰撞电离现象的发生。
12. H~ 1 error estimates for the finite volume element method along characteristics for two dimensional semiconductor device with heat conduction
    二维热传导型半导体器件的特征有限体积元方法和H~1模分析
13. The invention discloses a process for preparing a well of a semiconductor device, which relates to the fabrication technology of a former semiconductor.
    本发明公开了一种半导体器件阱的制造方法，涉及半导体前道的制造工艺。
14. An active semiconductor device with three electrodes that may be either an amplifier or a switch.
    一种有源半导体器件，有三个电极，可以是放大器或开关。
15. With in-depth knowledge on semiconductor device physics and practical experience on processing.
    深入解半导体元件物理及制程。
16. A silicon semiconductor device used as a voltage regulator because of its ability to maintain an almost constant voltage with a wide range of currents.
    一种含硅的半导体仪器，被用来作电压调节器，因为它能够利用大幅的电流保持几乎所有的恒定电压。
17. In this thesis, we focus on how to effectively save required memory space when simulate a semiconductor device.
    本论文是探讨量子力学的物理特性与其在半导体元件上的模拟。
18. Semiconductor device parameter stability
    半导体器件参数稳定性
19. Pertaining to a semiconductor device in which both majority and minority carriers are present.
    用于修饰或说明其中既有多数载流子又有少数载流子的半导体器件。
20. A semiconductor device simulator with a numerical model of high degree of accuracy is adopted to analyse the relations between the PIN limiter's spike leakage parameters and microwave pulses.
    PIN限幅器尖峰泄漏特性与脉冲重复频率的关系，即脉冲结束后限幅器的恢复特性；
21. And the second, we use the equivalent circuit model of semiconductor device with quantum mechanics to observe the charge distribution in the quantum well.
    其次，再配合我们建立的量子力学等效电路模型，来研究半导体元件中载子在量子井的运动情形。
22. Electrotechnical terminology& Power semiconductor device
    GB/T2900.32-1994电工术语电力半导体器件
23. The solution using a spline procedure, SADI, and a high-order compact finite difference ( HOC) method is presented for the hydrodynamic ( HD) model for semiconductor device simulation.
    采用ADI与高阶紧致差分相结合的方法计算大型非对称稀疏矩阵，并实现了该算法在半导体器件模拟中的应用。
24. Failure Analysis Application in Semiconductor Device R_c Failures
    半导体器件金属互连电阻失效分析方法研究
25. HEMT is a kind of high speed semiconductor device that bases on the heterojunction modulation doping.
    高电子迁移率晶体管（HEMT）是基于异质结调制掺杂发展起来的一种高频高速半导体器件。
26. And this will contribute to the study and development of the power semiconductor device research in our country.
    这对于我国功率半导体器件领域的研究与发展具有着重要的理论意义和实际意义。
27. Now, wire bonding has been the most popular interconnection technique in semiconductor device packaging.
    目前，引线键合技术已经成为半导体封装中广泛应用的互连方法。
28. Semiconductor device modelling is a key connection between circuit design and manufacturing technology.
    半导体器件建模是连接起电路设计和制造技术的一个重要环节。
29. SOI LDMOS device is a new type power semiconductor device which developed on the basis of LDMOS device.
    SOILDMOS器件是基于LDMOS器件的一种新型功率半导体器件。
30. And the thermal expansion coefficient and processing performance is similar to silicon, ceramics and other semiconductor device.
    而且具有与硅、陶瓷等半导体器件相近的热膨胀系数和良好的加工性能。

noun

1. a conductor made with semiconducting material

   Synonym:    semiconductor unitsemiconductor